A thermally efficient structure of InGaP/GaAs hetero-junction bipolar transistor for power amplifier applications

Author

Lee, Y.S. ; Park, C.S.

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea

Volume

1

fYear

2001

fDate

2001

Firstpage

264

Abstract

Designed several structures of InGaP/GaAs HBTs in accord with permitted limit of fabricating process, and analyzed their performance in the aspect of thermal limitation and power density. Simulated thermal distribution of the structure composed of 1 base with 2 emitter fingers compared with the structure composed of 2 bases with 1 emitter finger. The structure composed of 1 base with 2 emitters has several advantages in thermal behaviour and high power application. The simulation result of thermal distribution shows that one unit cell composed of 1 base with 2 emitters has lower maximum temperature than that composed of 2 bases with 1 emitter by 12 K. Measured negative resistance in I_C-V _CE plot of unit cell composed of 2 bases with 1 emitter is larger than the unit cell composed of 1 base with 2 emitters by 1.41 times. Also array with three unit cells composed of 2 bases with 1 emitter shows current gain collapse at V_CE of 8 V while the array with three unit cells composed of 1 base with 2 emitter does not show current gain collapse in the same bias condition. The unit cell of InGaP/GaAs HBT composed of 1 base with 2 emitters shows better thermal properties and power performance

Keywords

MMIC power amplifiers; bipolar MMIC; circuit simulation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; negative resistance; temperature distribution; 8 V; InGaP-GaAs; InGaP/GaAs; bias condition; current gain collapse; emitter fingers; fabricating process; hetero-junction bipolar transistor; high power application; maximum temperature; microwave amplifier applications; negative resistance; power amplifier applications; power density; simulation result; thermal behaviour; thermal distribution; thermal limitation; thermally efficient structure; Bipolar transistors; Fingers; Gallium arsenide; Global warming; Heterojunction bipolar transistors; Power amplifiers; Power generation; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985637

Filename

985637