Title :
A compact MMIC SPDT switch for 60 GHz applications
Author :
Svedin, J. ; Gustafsson, A.
Author_Institution :
FOI Swedish Defence Res. Agency, Linkoping, Sweden
Abstract :
This paper presents a GaAs MMIC SPDT switch for 60 GHz applications. Insertion loss and isolation of the switch was measured to be 1 dB and 20 dB, respectively. The circuit uses only two passive HEMT devices in shunt configuration making it very compact, reciprocal and with a high power performance
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; losses; microwave switches; power integrated circuits; power semiconductor switches; switching circuits; 1 dB; 60 GHz; D01PH process; EHF; GaAs; GaAs PHEMT power optimized process; MMIC SPDT switch; Philips process; compact SPDT switch; high power performance; insertion loss; isolation; low loss switch; passive HEMT devices; shunt configuration; Circuits; Communication switching; Frequency; Gallium arsenide; Impedance; Insertion loss; Loss measurement; MMICs; Semiconductor device measurement; Switches;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985647
