A high stability silicon/silicon-dioxide capacitor

Investigations originally stimulated by an interest in the passivation of silicon surfaces have culminated in a high stability capacitor with a silicon-dioxide thin film as the dielectric. This paper presents some characteristics of the silicon-dioxide thin film alone, and of a silicon/silicon-dioxide capacitor. The capacitor can exhibit either a highly stable capacitance or a capacitance which is frequency and bias-variant, depending on the resistivity and conductivity type of silicon used.