A three-dimensional numerical simulator of phase-change memory by random nucleation and growth approach

Due to restricted dimensions, the two-dimensional structure is not able to simulated one special geometry precisely, such as the asymmetric heater structure, Edge contact and u-trench structures. In this paper, a real 3d numerical model based on the finite element method for phase change random access memory is developed. Study on the phase change by using the heat-transfer equations, Laplace equation and Monte Carlo method based on the nucleation and growth theory [1]. Some heater with different shapes is simulated in this paper. The temperature distribution, phase fraction profiles I-R curves and I-V curves can be simulated respectively. By analyzing the programming properties of cells at different device structure, programming current and time, the impacts of the reset current to the programming characteristics are evaluated.