• DocumentCode
    3770158
  • Title

    Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions

  • Author

    Alessandro Grossi;Cristian Zambelli;Piero Olivo;J?r?my Alvarez-H?rault;Ken Mackay

  • Author_Institution
    Universit? di Ferrara, Dipartimento di Ingegneria, ENDIF, Via G. Saragat 1, 44122 Ferrara, Italy
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The impact of 500k write cycles on 1kbits TAS-MRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to-cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions.
  • Keywords
    "Switches","Force","Resistance","Electrical resistance measurement","Magnetic hysteresis","Reliability","Magnetic tunneling"
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
  • Type

    conf

  • DOI
    10.1109/NVMTS.2015.7457476
  • Filename
    7457476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770158