• DocumentCode
    3770161
  • Title

    SOT-MRAM based on 1Transistor-1MTJ-cell structure

  • Author

    Alexander Makarov;Thomas Windbacher;Viktor Sverdlov;Siegfried Selberherr

  • Author_Institution
    Institute for Microelectronics, TU Wien, Gu?hausstra?e 27-29/E360, A-1040 Wien, Austria
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose a new method of soft magnetic layer switching based on torques generated by the spin Hall effect and show a possibility of building 1Transistor-1MTJ cells with different paths for read and write operations. By performing extensive micromagnetic modeling our switching method has been verified.
  • Keywords
    "Switches","Magnetic tunneling","Magnetic switching","Torque","Magnetic domain walls","Magnetic domains"
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
  • Type

    conf

  • DOI
    10.1109/NVMTS.2015.7457479
  • Filename
    7457479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770161