Title :
SOT-MRAM based on 1Transistor-1MTJ-cell structure
Author :
Alexander Makarov;Thomas Windbacher;Viktor Sverdlov;Siegfried Selberherr
Author_Institution :
Institute for Microelectronics, TU Wien, Gu?hausstra?e 27-29/E360, A-1040 Wien, Austria
Abstract :
We propose a new method of soft magnetic layer switching based on torques generated by the spin Hall effect and show a possibility of building 1Transistor-1MTJ cells with different paths for read and write operations. By performing extensive micromagnetic modeling our switching method has been verified.
Keywords :
"Switches","Magnetic tunneling","Magnetic switching","Torque","Magnetic domain walls","Magnetic domains"
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
DOI :
10.1109/NVMTS.2015.7457479
