Title :
Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT:PSS/Ta memristor
Author :
Wenqiang Luo;Fang-Yuan Yuan;Huaqiang Wu;Liyang Pan;Ning Deng;Fei Zeng;Rongshan Wei;Xuanjing Cai
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing, China
Abstract :
In this paper, a memristor with structure of Cu/ PEDOT:PSS/ Ta was fabricated at room temperature. The conductance could be modulated incrementally by pulse sequences. The amplitude, width, frequency and quantity of the pulse sequence play important roles in conductance variation, which is similar to the weight of synapses. Several important synaptic learning behaviors such as short-term potentiation (STP), long-term potentiation (LTP) and spike-timing dependent plasticity (STDP) were emulated by this memristor, respectively. It is found that the movement of Cu ions is critical for this device.
Keywords :
"Memristors","Ions","Films","Neuromorphics","Electric fields","Nonvolatile memory","Physics"
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
DOI :
10.1109/NVMTS.2015.7457490