DocumentCode
3770898
Title
Impact of image force effect on gate-all-around Schottky barrier tunnel FET
Author
Shuichiro Hashimoto;Hiroki Kosugiyama;Kohei Takei;Jing Sun;Yuji Kawamura;Yasuhiro Shikahama;Kenji Ohmori;Takanobu Watanabe
Author_Institution
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, 169-8555, Tokyo, Japan
fYear
2014
fDate
7/1/2014 12:00:00 AM
Firstpage
1
Lastpage
4
Abstract
We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN
2159-3531
Type
conf
DOI
10.1109/INEC.2014.7460424
Filename
7460424
Link To Document