Title :
Computational materials design?: Realization of the switching mechanism in RRAM
Author :
Susan Aspera;Hideaki Kasai;Yukio Tamai;Nobuyoshi Awaya
Author_Institution :
Department of Applied Physics, Osaka University, 2-1 Yamadaoka, Suita, Japan
fDate :
7/1/2014 12:00:00 AM
Abstract :
Computational materials design® (CMD®) has been proven to be a very powerful tool for developing novel materials through obtaining relevant understanding of the basic principles underlying a system. Among others, realization of the switching mechanism in resistance random access memory (RRAM) devices has been an interesting field. Here, we propose a mechanism of resistive switching in RRAM based on the change in the electronic properties of the transition metal oxide (TMO) layer through the occurrence of rowed oxygen vacancies.
Keywords :
"Switches","Collaboration","Impurities"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460425