Title :
Experimental study of charge trapping type FinFET flash memory
Author :
Yongxun Liu;Toshihide Nabatame;Takashi Matsukawa;Kazuhiko Endo;Sinichi O´uchi;Junichi Tsukada;Hiromi Yamauchi;Yuki Ishikawa;Wataru Mizubayashi;Yukinori Morita;Shinji Migita;Hiroyuki Ota;Toyohiro Chikyow;Meishoku Masahara
Author_Institution :
National Institute of Advanced Industrial Science Technology (AIST), 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan
fDate :
7/1/2014 12:00:00 AM
Abstract :
The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.
Keywords :
"MONOS devices","Logic gates","Three-dimensional displays","SONOS devices","Flash memories","Aluminum oxide","High K dielectric materials"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460429
