• DocumentCode
    3770903
  • Title

    Experimental study of charge trapping type FinFET flash memory

  • Author

    Yongxun Liu;Toshihide Nabatame;Takashi Matsukawa;Kazuhiko Endo;Sinichi O´uchi;Junichi Tsukada;Hiromi Yamauchi;Yuki Ishikawa;Wataru Mizubayashi;Yukinori Morita;Shinji Migita;Hiroyuki Ota;Toyohiro Chikyow;Meishoku Masahara

  • Author_Institution
    National Institute of Advanced Industrial Science Technology (AIST), 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.
  • Keywords
    "MONOS devices","Logic gates","Three-dimensional displays","SONOS devices","Flash memories","Aluminum oxide","High K dielectric materials"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460429
  • Filename
    7460429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770903