Title :
Silicon nanowire MOSFETs for diverse applications: A review
Author :
Akira Fujiwara;Katsuhiko Nishiguchi;Gento Yamahata
Author_Institution :
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
fDate :
7/1/2014 12:00:00 AM
Abstract :
We review our recent work on silicon nanowire MOSFETs, which has been aiming at ultimate control of electrons using a category of single-electron (SE) devices which allow us to manipulate and detect electrons one by one. We demonstrated precise transfer of SEs, charge detection with an SE resolution, SE-based random number generation, and SE-based stochastic resonance.
Keywords :
"Silicon","Nanoscale devices","Temperature measurement","Standards","Error analysis","Frequency measurement","Temperature sensors"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460452
