• DocumentCode
    3770926
  • Title

    Silicon nanowire MOSFETs for diverse applications: A review

  • Author

    Akira Fujiwara;Katsuhiko Nishiguchi;Gento Yamahata

  • Author_Institution
    NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We review our recent work on silicon nanowire MOSFETs, which has been aiming at ultimate control of electrons using a category of single-electron (SE) devices which allow us to manipulate and detect electrons one by one. We demonstrated precise transfer of SEs, charge detection with an SE resolution, SE-based random number generation, and SE-based stochastic resonance.
  • Keywords
    "Silicon","Nanoscale devices","Temperature measurement","Standards","Error analysis","Frequency measurement","Temperature sensors"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460452
  • Filename
    7460452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770926