Temperature dependence characteristics of In0.53Ga0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors

A novel single-barrier In_0.53Ga_0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode´s characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In_0.53Ga_0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.