• DocumentCode
    3770944
  • Title

    Temperature dependence characteristics of In0.53Ga0.47As/AlAs asymmetric spacer-layer tunnel (ASPAT) diode detectors

  • Author

    Yuekun Wang;Mohd Rashid Redza Abdullah;James Sexton;Mohamed Missous

  • Author_Institution
    School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel single-barrier In0.53Ga0.47As-AlAs tunnel diodes with asymmetric spacer layers for millimetre and THz detection were designed and fabricated. These devices meet the requirements of detectors with a much weaker temperature dependence than Schottky diodes. The I-V measurements over the temperature range 77K to 400K revealed temperature independency of the diode´s characteristics within this wide range. The DC properties and the temperature dependence characteristics of this In0.53Ga0.47As/AlAs ASPAT diodes are presented for the first time and the temperature dependency of the new ASPAT diodes are found to be superior to those of conventional GaAs/AlAs ASPAT diodes.
  • Keywords
    "Temperature measurement","Schottky diodes","Temperature dependence","Gallium arsenide","Detectors","Temperature distribution"
  • Publisher
    ieee
  • Conference_Titel
    Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China
  • Type

    conf

  • DOI
    10.1109/UCMMT.2015.7460589
  • Filename
    7460589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770944