Four-Wave Mixing in Monolithically Integrated Multiwavelength Lasers Manufactured in a Generic Technology Platform

Author

Lawniczuk, Katarzyna ; Lenstra, Daan

Author_Institution

Photonic Integration Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

6

Abstract

Four-wave mixing (FWM) is reported in a multiwavelength laser chip manufactured in an indium phosphide generic technology platform. Measured conversion efficiencies are presented for frequency spacing of 100, 200, and 1700 GHz. The frequencies correspond to pairs of activated channels modulo the free spectral range of the on-chip integrated arrayed waveguide grating-based laser. Observed FWM trends are similar to reported efficiencies in traveling-wave amplifiers.

Keywords

III-V semiconductors; arrayed waveguide gratings; indium compounds; integrated optoelectronics; monolithic integrated circuits; multiwave mixing; semiconductor optical amplifiers; waveguide lasers; InP; activated channels; conversion efficiency; four-wave mixing; frequency 100 GHz; frequency 1700 GHz; frequency 200 GHz; frequency spacing; indium phosphide generic technology platform; monolithically integrated multiwavelength lasers; multiwavelength laser chip; on-chip integrated arrayed waveguide grating-based laser; Arrayed waveguide gratings; Four-wave mixing; Semiconductor optical amplifiers; Waveguide lasers; InP; Semiconductor laser; arrayed waveguide grating; four-wave mixing; generic integration; multiwavelength laser; photonic integrated circuit;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2424833

Filename

7091889