A compact approach for the design of a dual-band low-noise amplifier

Author

Sharaf, Khaled M. ; Elhak, Hany Y.

Author_Institution

Dept. of Electr. Eng., Ain Shams Univ., Cairo, Egypt

Volume

2

fYear

2001

fDate

2001

Firstpage

890

Abstract

A compact approach for the design of a dual-band LNA is devised. The proposed dual-band integrated LNA features a minimum number of devices that reduces the physical layout and makes it area-efficient. Band selection is controlled by three switches that guarantee good input/output matching, adequate forward gain and low noise figure. The LNA circuit has been designed and simulated using a 0.8 μm SiGe Bi-CMOS technology. Simulation results for the GSM 900 MHz and DCS 1800 MHz bands indicate that the achieved NF is < 2 dB, forward gain is > 18 dB and IIP3 is > -7 dBm while consuming 15 mW from a 2.7 V supply for both the two bands

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit noise; semiconductor materials; 0.8 micron; 15 mW; 18 dB; 1800 MHz; 2 dB; 2.7 V; 900 MHz; DCS band; GSM band; IIP3; RF chip; SiGe; SiGe BiCMOS technology; area efficiency; circuit simulation; compact design; dual-band low-noise amplifier; forward gain; input matching; noise figure; output matching; physical layout; switch; Circuit simulation; Distributed control; Dual band; GSM; Germanium silicon alloys; Impedance matching; Noise figure; Noise measurement; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on

Conference_Location

Dayton, OH

Print_ISBN

0-7803-7150-X

Type

conf

DOI

10.1109/MWSCAS.2001.986330

Filename

986330