DocumentCode :
3772161
Title :
Degradation of insulating materials including SiO2 due to SF6 gas dissociation products
Author :
Toshio Suzuki;Shigeo Nakayama;Tetsuo Yoshimitsu
Author_Institution :
Tokyo Shibaura Electric Co., Ltd., Kawasaki Japan
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
176
Lastpage :
179
Abstract :
Materials including silicon dioxide (SiO2) are degraded by SF6 gas dissociation products. In Toshiba Laboratory changes in surface resistivity and volume resistivity of insulating materials including SiO2, for instance porcelain, due to SF6 dissociation products were investigated. It was found that surface resistance and volume resistance of these materials decreased with the existence of SF6 gas dissociation products and moisture. And it was found too that chemical products that lessened the surface and volume resistivity is some acids and some salts of these acids. By chemical analysis almost of these acids are assumed to be H2SiF6.
Keywords :
"Moisture","Conductivity","Surface resistance","Porcelain","Electrical resistance measurement","Electrodes"
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 1978 IEEE International Conference on
Print_ISBN :
978-1-5090-3121-4
Type :
conf
DOI :
10.1109/EIC.1978.7463621
Filename :
7463621
Link To Document :
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