• DocumentCode
    3773018
  • Title

    High temperature ion implanter for SiC and Si devices

  • Author

    Naoya Takahashi;Suguru Itoi;Yoshiki Nakashima;WeiJiang Zhao;Hiroshi Onoda;Shigeki Sakai

  • Author_Institution
    575, Kuze-Tonoshiro-Cho, Minami-Ku, Kyoto, 601-8205 Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    SiC wafers are often used for making high level power electronic devices, such as SiC-MOS devices or SiC-IGBTs. Ion implantation is an essential process for making these high level power electronic devices. High temperature implanter called IMPHEAT® is developed to implant ions such as Aluminum, Boron, Phosphine and others into SiC wafers while heating the SiC wafers to high temperature like 500oC. Some of the characteristics of IMPHEAT® and the high temperature implanter EXCEED® has been introduced in this paper.
  • Keywords
    "Silicon carbide","Plasma temperature","Temperature measurement","Implants","Silicon","Heating","Temperature"
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2015 15th International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWJT.2015.7467062
  • Filename
    7467062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3773018