• DocumentCode
    3773034
  • Title

    Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices

  • Author

    Takuji Hosoi;Hiroshi Oka;Yuya Minoura;Takayoshi Shimura;Heiji Watanabe

  • Author_Institution
    Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    Our systematic studies of P-implanted NiGe/Ge junctions revealed the definite threshold in the P concentration for alleviating FLP and negligible P diffusion during drive-in annealing. These findings enable us to design the NiGe/Ge junction characteristics by modifying the device structure and implantation condition. We also demonstrated metal S/D p- and n-MOSFET operations with sub-1-nm EOT using the fabrication process flow of NiGe/Ge.
  • Keywords
    "MOSFET circuits","Ion implantation","Metals","Junctions","Resists","Annealing","CMOS integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2015 15th International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWJT.2015.7467099
  • Filename
    7467099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3773034