Impact of microwave annealing on advanced junction technology

The application of microwave annealing (MWA) to advanced junction technology, especially aiming for the formation of NiPt silicide and defect-less p-n junctions has been studied. Low temperature MWA is featured in the integration of ultimately scaled logic CMOS and non-digital functionalities. We demonstrate that MWA can form low-resistive and homogeneous NiPt silicide with the low junction leakage current in scaled logic CMOS. Furthermore, MWA effectively repairs ion-implantation damage in p-n junctions without the excessive dopant diffusion. MWA is one of the promising method for implementing high-performance logic CMOS and highly-functional non-digital components on one chip.