Drain-controlled ambipolar conduction and hot-hole injection in Schottky barrier charge-trapping memory cells

Unique drain-controlled ambipolar conduction and hot-hole injection were reported in Schottky barrier charge-trapping cell devices. This work numerically elucidated the particular hole conduction and associated hot-hole injection that were sorely induced by drain voltages. At a sufficient drain voltage, the hole carriers can pass through the drain-side Schottky barrier to yield a large drain current, and the drain-side Schottky barrier produces a strong lateral field around the drain region to generate unique hot-holes injection.