UV Enhanced Indium-Doped ZnO Nanorod Field Emitter

Author

Shoou-Jinn Chang ; Bi-Gui Duan ; Chung-Wei Liu ; Chih-Hung Hsiao ; Sheng-Joue Young ; Chien-Sheng Huang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3901

Lastpage

3906

Abstract

In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V/μm. The field enhancement factors, β, of the pure and indium-doped ZnO nanorods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

Keywords

II-VI semiconductors; X-ray diffraction; field emission; field emission electron microscopy; indium; nanofabrication; nanorods; photoluminescence; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc compounds; Fowler-Nordhein plot; UV enhanced indium-doped ZnO nanorod field emitter; X-ray diffraction; ZnO:In; crystalline quality; field emission scanning electron microscopy; field enhancement factors; high-resolution transmission electron microscope; hydrothermal method; morphology; photoluminescence spectroscopy; structure; turn-on field; Doping; Educational institutions; Indium; Lighting; Nanostructures; Zinc oxide; Field emission; hydrothermal; indium-doped ZnO nanorods;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2280910

Filename

6619440