Parametric analysis of memristive switching mechanism

With the Moore´s law drawing in a saturation limit closer for our current technologies in the semiconductor field, the need for efficient technologies better than the present majorly in terms of energy, speed and storage is growing loud every day. Unexpectedly, the key to this solution comes from the past. Memristor thus became the pioneers for opening of such a possibility. A linear ion drift model of memristor was realized along with a memristor based imply logic gate. The analysis were then carried on various parameters affecting its characteristics such as excitation frequency, drift ion mobility, resistances, state function, electrode size and choice of electrode material. This paper presents a theoretical approach to deal with the understanding of parameters making a memristor and controlling it as a switch and also to identify various issues related to its physical realization.