Impact of temperature variation and oxide thickness variation on the performance of CNTFET based inverter in nanometer regime

In this paper the performance analysis of CNTFET inverter under the variation of temperature and oxide thickness presented. The influence of variation of parameters on the characteristics of CNTFET inverter is simulated and analyzed using H-SPICE tool and Stanford nano model-39 of CNTFET. It´s been observed that the effect of change in temperature and oxide thickness has little effect on rise and fall time of the inverter. The leakage power consumption of the CNTFET inverter is very small and to validate this comparison study has been carried out. The work emphasizes on the aspects of reliable logic circuit design with CNTFETS.