• DocumentCode
    3778815
  • Title

    High-density reRAM for storage class memory

  • Author

    Scott Sills;Alessandro Calderoni;Nirmal Ramaswamy;Shuichiro Yasuda;Katsuhisa Aratani

  • Author_Institution
    Micron Technology, Inc, Boise, Idaho, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper highlights selection process for ReRAM development, key challenges faced when implementing high-density ReRAM, and reports on 16Gb Cu-ReRAM designed at the 27nm node, with 200MB/s write and 1GB/s read throughputs.
  • Keywords
    "Switches","Resistance","Transistors","Metals","Ions","Bit error rate","Random access memory"
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
  • Type

    conf

  • DOI
    10.1109/NVMTS.2015.7499973
  • Filename
    7499973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3778815