Design of low leakage CMOS based full wave bridge rectifier

In this paper a low leakage CMOS based full wave bridge rectifier is analyzed. MOS based bridge rectifier circuit is being proposed in this study instead of the conventional diode bridge rectifier circuit because of its less reverse leakage parameters, proper utilization of switching mechanism results in high efficiency and suitability for high frequency application. It finds applications in many modern electronic applications such as signal processing, conditioning, measurement and instrumentation. The reduction of leakage parameters is exceeded to the improved rectifier efficiency of the proposed circuit. After simulation and analysis of proposed circuit, the leakage power obtained for the proposed circuit has found 1.089 fW; the average power of the proposed circuit has found 1.76 μW. The efficiency of the proposed circuit has found 81.83% which explains an improvement as compared to that of the diode based bridge rectifier circuit. The design is simulated at 45nm technology.