• DocumentCode
    3779711
  • Title

    Advanced one micron BiCMOS technology for high speed 256K srams

  • Author

    B. Bastani;C. Lage;L. Wong;J. Small;R. Lahri;L. Bouknight;T. Bowman;J. Manoliu;P. Tuntasood

  • Author_Institution
    BiCMOS Integration, unit Process Development, Device Physics, and Design Groups, Fairchild Semiconductor, Puyallup, WA 98373
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    One micron BiCMOS technology for high speed 2568 SRAM is developed. Advanced lithography and processing techniques support high density CMOS design with ECL performance. This technology is also extended to logic applications.
  • Keywords
    "Random access memory","MOSFET","BiCMOS integrated circuits","Performance evaluation","Bipolar transistors","Logic gates","Implants"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779711