Title :
Advanced one micron BiCMOS technology for high speed 256K srams
Author :
B. Bastani;C. Lage;L. Wong;J. Small;R. Lahri;L. Bouknight;T. Bowman;J. Manoliu;P. Tuntasood
Author_Institution :
BiCMOS Integration, unit Process Development, Device Physics, and Design Groups, Fairchild Semiconductor, Puyallup, WA 98373
fDate :
5/1/1987 12:00:00 AM
Abstract :
One micron BiCMOS technology for high speed 2568 SRAM is developed. Advanced lithography and processing techniques support high density CMOS design with ECL performance. This technology is also extended to logic applications.
Keywords :
"Random access memory","MOSFET","BiCMOS integrated circuits","Performance evaluation","Bipolar transistors","Logic gates","Implants"
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
