DocumentCode :
3779716
Title :
A silicon-added bilayer resist (SABRE) process for high-resolution optical lithography
Author :
W. C. KcColgin;J. Jech;R. C. Daly;T. B. Brust
Author_Institution :
Microelectronics Technology Division, Electronics Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
fYear :
1987
fDate :
5/1/1987 12:00:00 AM
Firstpage :
9
Lastpage :
10
Abstract :
There has been considerable recent interest in silicon-containing or silicon-receptive materials for use in improved-resolution optical and e-beam lithography. Inherent in such materials is the promise of trilayer lithographic performance in much simpler bilayer or even single-layer resist processes. Unfortunately, formulating photoresists with the necessary amount of silicon tends to dilute their performance, either by reducing their resolution or by lowering their Tg. Other approaches reverse the usual pattern polarity or are sensitive to flare light. Introduced here is a new bilayer process of positive polarity that uses conventional novolac resist materials. In this process, Silicon is added to the thin top resist layer after it is exposed and developed, with no loss in resist performance. Accordingly, we have selected the name SABRE for Silicon-Added Bilayer REsist.
Keywords :
"Resists","Floods","Silicon","Ovens","Planarization","Process control"
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
Type :
conf
Filename :
7508742
Link To Document :
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