• DocumentCode
    3779717
  • Title

    Hot-carrier-induced MOSFET degradation: AC versus DC stressing

  • Author

    J. Y. Choi;P. K. Ko;C. Hu

  • Author_Institution
    Electronics Research Laboratory, Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    In this paper, comparative studies on the MOSFET degradation under AC and DC stresses are presented. An excess substrate current during the trailing edge of the gate pulse may be responsible for the enhanced AC degradation.
  • Keywords
    "Degradation","Logic gates","Stress","Substrates","Transient analysis","Hot carriers","Charge carrier processes"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779717