A high aspect ratio and high throughput SiO2 planarization technology with Bias-ECR plasma deposition

For the Bias-ECR plasma deposition, the SiO₂ filling characteristics are improved by applying rf bias to the substrate. Further, the surface of the interconnections with the aspect ratio 2.0 can be planarized perfectly. The Bias-ECR plasma deposition utilizing the selective etching of O₂ gas is effective for reducing the time of the planarization process. Therefore, the Bias-ECR plasma deposition is successfully applicable to the planarization of the submicron interconnection.