A band-to-band tunneling effect in the trench transistor cell

A 4Megabit DRAM has been fabricated using a novel 9 μm², I-transistor cell where both the pass transistor and the storage capacitor are incorporated in a trench T. This paper will discuss a hand-to-hand tunneling mechanism in the Trench Transistor Cell (TTC). This effect should be operative in a class of trench cells where the charge is stored inside the trench and the substrate forms a capacitor plate.