Trench capacitor using R.T.O. for MEGA bit DRAM´s

Electrical characteristics of trench capacitors by using R.T.O. process have been discussed. Trench capacitors with high field dielectric breakdown and low interface state density are obtained by using R.T.O. at high temperature (>1100 t). Degradation of time dependent dielectric breakdown and pause refresh time of 1M bit DRAM are also improved by this technique. This technique gives us thin oxide with high quality and reliability for trench capacitors and promise to realize the high performance mega-bit class DRAM.