PASPAC (Planaraized Al/Silicide/Poly Si with self aligned contact) with low contact resistance and high reliability in CMOS LSIs

PASPAC system has been proposed. Using this technology, planarization at the contact area has been accomplished, which gives a large impact on multi-level interconnection process. Moreover, low resistive and thermally stable ohmic contact can be obtained even at submicron region. In this structure, contact characteristics are readily controlled by implanted ion dose, which also acts as self aligned contact. This technology, combined with an advanced CMOS process appears to be a quite promising metallization system for submicron CMOS LSI´s in view of low resistive self aligned contact and high reliable interconnection.