The use of CoSi2 as compared to TiSi2 for a self-aligned silicide technology

Self-aligned silicidation technologies to form a silicide on source/drain and gate regions of MOS devices are receiving increasing interest to reduce the poly-Si line resistance, the contact resistance and the sheet resistance of the diffusion regions, TiSi₂ is by far the most widely accepted material for this technology [1]. The aim of this paper is to compare CoSi₂ and TiSi₂ with respect to various materials/processing aspects and electrical characteristics.