• DocumentCode
    3779744
  • Title

    Three dimensional process simulator for photo and electron beam lithography, and estimations of proximity effects

  • Author

    Y. Hirai;M. Sasago;M. Endo;K. Ikeda;S. Tomida;S. Hayama

  • Author_Institution
    Semiconductor Research Center., Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570 Japan
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    In this work, a three dimensional topographical simulator is newly developed using cell removal model for etching simulation. Also, the simulator is effectively applied to estimate half micron pattern fabrication by both photo and electron beam lithography.
  • Keywords
    "Lithography","Resists","Etching","Electron beams","Face","Proximity effects","Solid modeling"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779744