Title :
Three dimensional process simulator for photo and electron beam lithography, and estimations of proximity effects
Author :
Y. Hirai;M. Sasago;M. Endo;K. Ikeda;S. Tomida;S. Hayama
Author_Institution :
Semiconductor Research Center., Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570 Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
In this work, a three dimensional topographical simulator is newly developed using cell removal model for etching simulation. Also, the simulator is effectively applied to estimate half micron pattern fabrication by both photo and electron beam lithography.
Keywords :
"Lithography","Resists","Etching","Electron beams","Face","Proximity effects","Solid modeling"
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
