DocumentCode :
3779745
Title :
Experimental characterization of α-induced charge collection mechanism for megabit DRAM cells
Author :
K- Takeuchi;K. Shimohigashi;E. Takeda;E. Yamasaki;T. Toyabe;K. Itoh
Author_Institution :
Central Research Laboratory> Hitachi Ltd, Kokubunji, Tokyo 185, Japan
fYear :
1987
fDate :
5/1/1987 12:00:00 AM
Firstpage :
99
Lastpage :
100
Abstract :
The α-particle induced soft errors in DRAM´s have become a major problem in reducing memory cell sizes. Intensive efforts have been made for studying charge collection mechanisms, diffusion and funneling. However. it is not clear yet how these mechanisms contribute to the critical charge QC of various cell sizes quantitatively.
Keywords :
"Random access memory","Charge measurement","Timing","Very large scale integration","Solid modeling","Substrates"
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
Type :
conf
Filename :
7508770
Link To Document :
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