Title :
Subquarter-micrometer p-channel MOSFET´s with 80 nm S/D junctions
Author :
M. Miyake;T. Kobayashi;S. Horiguchi;K. Iwadate;K. Kurihara
Author_Institution :
NTT Electrical Communications Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
Subquarter-micrometer p-channel MOSFET´s with extremely shallow S/D junctions (80 nm) and ultra thin gate oxide (3.5 nm) have been fabricated. The threshold voltage of -0.64V and a maximum transconductance of 280 mS/mm have been achieved for 0.18 μm gate length MOSFET´s.
Keywords :
"Logic gates","Junctions","Threshold voltage","Performance evaluation","Doping","Annealing","Radiation detectors"
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
