Title :
A new CMOS SRAM cell with fully planarizing technology
Author :
Yoshitaka Narita;Shuichi Ohya;Masanori Kikuohi
Author_Institution :
1st LSI Division, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
In this paper, we describe the fully planarizing process technology, the basic characteristics of the two kinds of contact structure and a 256K SRAM fabricated with this technology.
Keywords :
"CMOS integrated circuits","CMOS technology","SRAM cells","Films","Filling","Logic gates"
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
