Submicron tungsten gate MOSFET with 10 nm gate oxide

Submicron tungsten gate MOSFET with 10 nm gate oxide has been demonstrated for the first time. The results ranging from W stability against SiO₂ to excellent thin oxide MOS properties and high FET transconductance, demonstrate the feasibility and advantages of the tungsten gate for submicron technologies. In applications such as high density DRAM, tungsten can be a primary candidate for gate material due to its low resistivity and midgap work function.