• DocumentCode
    3779756
  • Title

    Accelerated testing of silicon dioxide wearout

  • Author

    I. C. Chen;J. Lee;C. Hu

  • Author_Institution
    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    Oxide lifetime extrapolation using log(tBD) or better log(QBD) against 1/ Eox plot is more accurate and has a theoretical basis. Highly accelerated oxide test completed in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related break-down lifetime can be performed assuming an effective oxide thinning for defects.
  • Keywords
    "Acceleration","Electric breakdown","Life estimation","Extrapolation","Solids","Charge carrier processes","Current density"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779756