DocumentCode :
3779756
Title :
Accelerated testing of silicon dioxide wearout
Author :
I. C. Chen;J. Lee;C. Hu
Author_Institution :
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720
fYear :
1987
fDate :
5/1/1987 12:00:00 AM
Firstpage :
23
Lastpage :
24
Abstract :
Oxide lifetime extrapolation using log(tBD) or better log(QBD) against 1/ Eox plot is more accurate and has a theoretical basis. Highly accelerated oxide test completed in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related break-down lifetime can be performed assuming an effective oxide thinning for defects.
Keywords :
"Acceleration","Electric breakdown","Life estimation","Extrapolation","Solids","Charge carrier processes","Current density"
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN :
978-1-5090-3151-1
Type :
conf
Filename :
7508781
Link To Document :
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