DocumentCode :
3779919
Title :
Design of a 2.8 W S-band power amplifier using load pull measurement
Author :
Ashish Jindal;Umakant Goyal;S K Tomar;Meena Mishra;Seema Vinayak
Author_Institution :
Solid State Physics Laboratory, DRDO, Delhi, India
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
In this work, SSPL GaN-HEMT based S-band (2.0 to 2.2 GHz) power amplifier design, fabrication, assembly and RF measurement results have been discussed. Designed single stage power amplifier is providing optimized performance over desired band with 15dB small signal gain and 2.8 W (P-1dB) CW power output with 57 % PAE. The design is based on the load pull measurement data and small signal S-parameters. Extensive load pull measurement and Co-EM simulation have been carried out for designing this circuit.
Keywords :
"Power amplifiers","Power measurement","Scattering parameters","Gallium nitride","HEMTs","Impedance","Power generation"
Publisher :
ieee
Conference_Titel :
Applied Electromagnetics Conference (AEMC), 2015 IEEE
Type :
conf
DOI :
10.1109/AEMC.2015.7509176
Filename :
7509176
Link To Document :
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