Design of X-band GaAs power amplifier

This paper proposes a design of X-band GaAs power amplifier with the technology of external impedance matching. According to the scattering parameter (S parameter) of field effect tube (FET) provided by manufacturer, the matching circuit and direct current (DC) bias circuit of power amplifier can be designed. The advantage of this method is that the work frequency, efficiency, gain and output power can be designed according to the actual situation by engineers autonomously. In addition, the method has the advantages of low cost and high efficiency. Simulation and practical measured data show that, when the center frequency is 8.2 GHz, the small signal gain is 8.1 dB, and the maximum output power is 31.25 dBm and the maximum power added efficiency (PAE) is 33.62 %.