DocumentCode :
3780566
Title :
The research and design of Anti-radiation CMOS integrated circuits
Author :
Yuan Zhao;Lixin Xu
Author_Institution :
Beijing Institute of technology, CAST, CHINA
fYear :
2015
Firstpage :
669
Lastpage :
673
Abstract :
In this essay, the characteristics and effects of CMOS integrated circuit on spacecraft is analyzed in the radiation environment. Based on the generation of radiation effect, the main anti-radiation design method is introduced in the CMOS integrated circuit area on designing and processing. In the outer space, there is prone to be CMOS semiconductor components of threshold voltage deviation, transdiode decreasing, substrate leakage current increasing and corner noise amplitude increasing in the CMOS integrated circuit. As a result, there are 2 measures proposed to protect against radiation of the integrated circuits. Anti-radiation CMOS integrated circuit and Anti-radiation Layout. Accordingly, testing result of anti-radiation LNA chips, the designed anti-radiation CMOS integrated circuits obtain the ideal effect in anti-radiation function.
Keywords :
"CMOS integrated circuits","Reliability","Lead"
Publisher :
ieee
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2015 IEEE 6th International Symposium on
Type :
conf
DOI :
10.1109/MAPE.2015.7510407
Filename :
7510407
Link To Document :
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