Title :
Parameters analysis of Gaussian pulse circuit based on avalanche transistors
Author :
Dongxiao Li;Xu Yang
Author_Institution :
EMC Laboratory, Beihang University, Beijing, China
Abstract :
Marx circuit based on avalanche transistors could be used to produce high power-nanosecond-Gaussian pulse. In this paper, theoretical calculations and software simulation of circuit parameters on the impact of the pulse waveform parameters are analyzed. The results show us that the charging voltage mainly affect amplitude and rise time of the pulse generated, the charging capacitor mainly impact the amplitude and fall time of the pulse, charging resistors could limit the maximum pulse repetition frequency. This paper provides a theoretical reference for the selection of components in the design of pulse source circuit and the researches of adjustable Gaussian pulse source.
Keywords :
"Transistors","Tin"
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2015 IEEE 6th International Symposium on
DOI :
10.1109/MAPE.2015.7510428