DocumentCode :
3780587
Title :
Parameters analysis of Gaussian pulse circuit based on avalanche transistors
Author :
Dongxiao Li;Xu Yang
Author_Institution :
EMC Laboratory, Beihang University, Beijing, China
fYear :
2015
Firstpage :
764
Lastpage :
768
Abstract :
Marx circuit based on avalanche transistors could be used to produce high power-nanosecond-Gaussian pulse. In this paper, theoretical calculations and software simulation of circuit parameters on the impact of the pulse waveform parameters are analyzed. The results show us that the charging voltage mainly affect amplitude and rise time of the pulse generated, the charging capacitor mainly impact the amplitude and fall time of the pulse, charging resistors could limit the maximum pulse repetition frequency. This paper provides a theoretical reference for the selection of components in the design of pulse source circuit and the researches of adjustable Gaussian pulse source.
Keywords :
"Transistors","Tin"
Publisher :
ieee
Conference_Titel :
Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2015 IEEE 6th International Symposium on
Type :
conf
DOI :
10.1109/MAPE.2015.7510428
Filename :
7510428
Link To Document :
بازگشت