• DocumentCode
    3781196
  • Title

    NBTI prediction and its induced time dependent variation

  • Author

    Jian F. Zhang;Meng Duan;Zhigang Ji;Weidong Zhang

  • Author_Institution
    School of Engineering, Liverpool John Moores University, Liverpool L3 3AF, UK
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Negative bias temperature instability (NBTI) prediction relies on a reliable extraction of power exponents from its kinetics. When measured by fast pulse technique, however, the kinetics does not follow a power law. This paper reviews the recent progresses on how to restore the power law, based on the As-grown-Generation (AG) model. For nanometer sized devices, NBTI is different for different devices, inducing a time-dependent variation. The new technique proposed for characterizing this Time-dependent Variation accounting for within-a-device-Fluctuation (TVF) will be reviewed.
  • Keywords
    "Stress","Fluctuations","Standards","Silicon","Predictive models","Electron devices"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7516942
  • Filename
    7516942