DocumentCode :
3781196
Title :
NBTI prediction and its induced time dependent variation
Author :
Jian F. Zhang;Meng Duan;Zhigang Ji;Weidong Zhang
Author_Institution :
School of Engineering, Liverpool John Moores University, Liverpool L3 3AF, UK
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Negative bias temperature instability (NBTI) prediction relies on a reliable extraction of power exponents from its kinetics. When measured by fast pulse technique, however, the kinetics does not follow a power law. This paper reviews the recent progresses on how to restore the power law, based on the As-grown-Generation (AG) model. For nanometer sized devices, NBTI is different for different devices, inducing a time-dependent variation. The new technique proposed for characterizing this Time-dependent Variation accounting for within-a-device-Fluctuation (TVF) will be reviewed.
Keywords :
"Stress","Fluctuations","Standards","Silicon","Predictive models","Electron devices"
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
Type :
conf
DOI :
10.1109/ASICON.2015.7516942
Filename :
7516942
Link To Document :
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