Title :
Overshoot stress impact on HfO2 high-κ layer dynamic SILC
Author :
Guangxing Wan;Tianli Duan;Shuxiang Zhang;Lingli Jiang;Bo Tang;Chao Zhao;Huilong Zhu;HongYu Yu
Author_Institution :
South University of Science and Technology of China, Shenzhen 518055, China
Abstract :
Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT~0.8 nm) high-κ layer are investigated, which reveals that overshoot is of great concern to high-κ layer leakage current. The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to understand the above mentioned phenomena.
Keywords :
"Stress","Logic gates","Hafnium compounds","Degradation","Stress measurement","Inverters","Capacitance"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7516943
