Title :
A 39 GHz–80 GHz millimeter-wave frequency doubler with low power consumption in 65nm CMOS tehnology
Author :
Qian Chen;Fazhi An;Guangyao Zhou;Shunli Ma;Fan Ye;Junyan Ren
Author_Institution :
State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China
Abstract :
A wideband injection locking frequency doubler is proposed for millimeter wave frequency generation in CMOS. The circuit consists of two push-push pairs along with a cross-coupled oscillator which share a current source. The injection locking frequency doubler can generate frequencies from 39 GHz to 80.6 GHz, achieving a wide injection locking range of 69.5 %. The conversion gain of the doubler is more than -15dB in the whole locking range when driving a 30 fF capacitor. Designed in TSMC 65nm CMOS, the circuit has an active area of 340 × 180 um2. The injection locking frequency doubler consumes 11.8 mW dc power from 1.2V supply, while the output buffer consumes 5.96 mW.
Keywords :
"Injection-locked oscillators","Frequency conversion","Harmonic analysis","CMOS integrated circuits","Resonant frequency","Power demand"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7516966