• DocumentCode
    3781220
  • Title

    D-band down conversion chipset with I-Q outputs using 0.13μm SiGe BiCMOS technology

  • Author

    Xiao-Dong Deng;Yihu Li;Wen Wu;Yong-Zhong Xiong

  • Author_Institution
    Ministry Key Laboratory of JGMT, Nanjing University of Science and Technology (NUST), Nanjing, China, 210094
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a D-band down conversion chipset using 0.13μm SiGe BiCMOS technology. The chipset consists of a 62.5GHz doubler and a 2nd sub-harmonic mixer (2× SHM) with I-Q outputs. The doubler uses a push-push topology. The 2× SHM uses SiGe HBT to form a cascode structure and followed with a source follower. The output 62.5GHz signal of the doubler is split into two ways by Wilkinson power divider: one way is fed to a 2× SHM directly, while the other way is fed to a 2× SHM after 45° phase shifting by microstrip line, thus the IF with I-Q output is achieved. The chip size is 1.6×0.85 mm2. The measurement results show that the peak conversion gain is 0.8dB with RF @137GHz (IF@12GHz) and LO @ 31.25GHz and the difference between I/Q output is less than 1 dB with the IF frequency 3-18 GHz.
  • Keywords
    "Mixers","Radio frequency","Silicon germanium","Frequency measurement","BiCMOS integrated circuits","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7516977
  • Filename
    7516977