DocumentCode :
3781220
Title :
D-band down conversion chipset with I-Q outputs using 0.13μm SiGe BiCMOS technology
Author :
Xiao-Dong Deng;Yihu Li;Wen Wu;Yong-Zhong Xiong
Author_Institution :
Ministry Key Laboratory of JGMT, Nanjing University of Science and Technology (NUST), Nanjing, China, 210094
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a D-band down conversion chipset using 0.13μm SiGe BiCMOS technology. The chipset consists of a 62.5GHz doubler and a 2nd sub-harmonic mixer (2× SHM) with I-Q outputs. The doubler uses a push-push topology. The 2× SHM uses SiGe HBT to form a cascode structure and followed with a source follower. The output 62.5GHz signal of the doubler is split into two ways by Wilkinson power divider: one way is fed to a 2× SHM directly, while the other way is fed to a 2× SHM after 45° phase shifting by microstrip line, thus the IF with I-Q output is achieved. The chip size is 1.6×0.85 mm2. The measurement results show that the peak conversion gain is 0.8dB with RF @137GHz (IF@12GHz) and LO @ 31.25GHz and the difference between I/Q output is less than 1 dB with the IF frequency 3-18 GHz.
Keywords :
"Mixers","Radio frequency","Silicon germanium","Frequency measurement","BiCMOS integrated circuits","Semiconductor device measurement"
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
Type :
conf
DOI :
10.1109/ASICON.2015.7516977
Filename :
7516977
Link To Document :
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