Title :
Design of a high voltage gate driver module
Author :
Longcheng Que;Jian Lv;Simon S. Ang
Author_Institution :
University of Electronic Science and Technology of China, Chengdu, China
Abstract :
High voltage power MOSFET or IGBT requires a high-voltage gate driver. In this paper, a high voltage gate driver module to drive both the high-side and low-side switching power devices is designed. Both the total volume and parasitic inductance effects of the driver module are decreased considerably compared to the conventional approach of using two packaged single driver chips. A module package is designed and simulated. Two applications are proposed and their typical switching waveforms are simulated.
Keywords :
"Logic gates","MOSFET","Power supplies","Delays","Voltage control","Switches"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7516991
