• DocumentCode
    3781284
  • Title

    Advanced germanium channel transistors (invited)

  • Author

    C. W. Liu;I.-H. Wong;S.-H. Huang;C.-H. Huang;S.-H. Hsu

  • Author_Institution
    Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High performance Ge channel MOSFETs with inversion and junctionless operation modes are demonstrated. The Ge epi layer on SOI is used as substrate to meet the need of cost reduction and mass production. The gate-all-around structure formed by selective anisotropic etching provides good channel controllability and the defect at Ge/Si interface is removed. The high drive current of 828 μA/μm for nFETs and 390 μA/μm for pFETs are achieved with low leakage current and good subthreshold characteristics.
  • Keywords
    "Logic gates","Silicon","Doping","Annealing","Substrates","Tensile strain","Transistors"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517063
  • Filename
    7517063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781284