Title :
Advanced germanium channel transistors (invited)
Author :
C. W. Liu;I.-H. Wong;S.-H. Huang;C.-H. Huang;S.-H. Hsu
Author_Institution :
Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan
Abstract :
High performance Ge channel MOSFETs with inversion and junctionless operation modes are demonstrated. The Ge epi layer on SOI is used as substrate to meet the need of cost reduction and mass production. The gate-all-around structure formed by selective anisotropic etching provides good channel controllability and the defect at Ge/Si interface is removed. The high drive current of 828 μA/μm for nFETs and 390 μA/μm for pFETs are achieved with low leakage current and good subthreshold characteristics.
Keywords :
"Logic gates","Silicon","Doping","Annealing","Substrates","Tensile strain","Transistors"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517063
