3D resist modeling for OPC correction and verification

With the continuous shrinking of feature dimensions down to sub-45nm regime in the semiconductor industry, traditional two dimensional (2D) optical proximity correction (OPC) modeling technique can no longer satisfy the need to precisely detect resist profiles in the three dimensional (3D) view. Patterning failures like scrumming in the resist bottom or resist top loss is impossible to be reported by such 2D models. As a result, 3D resist modeling is proposed to simulate the 3D profile of post-lithography resist. In this paper, a virtual fab flow is suggested to calibrate the resist 3D model by generating critical dimension (CD) data from the rigorous simulation tool. This approach shows the resist 3D prediction capability with a fast turn-around time (TAT).