An analytical series resistance model for on-chip stacked inductors with inclusion of proximity effect between stacked layers

A predictive analytical series resistance model for stacked inductors is proposed, in which all model values are analytically calculated with geometric and process parameters. For stacked inductor, the series resistance is one of the most critical parameter, and is always strongly frequency dependent. The underlying mechanisms include the skin effect, the proximity effect between the inner and outer turns, and the proximity effect between the upper and the lower layers. In this letter, all of these effects are discussed and modeled accordingly, and the silicon measurement and simulation results are provided to show the accuracy of the proposed model.